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Home Certified Peripherals Memory

Memory

Memory, which is commonly referred to as RAM (Random Access Memory), is a temporary (Volatile) storage area utilized by the CPU.
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MEMORY MODULE, 4G DDR3-1600 512X8 1.35V & 1.5V SAM
AQD-D3L4GN16-SG1
MEMORY MODULE, 4G DDR3-1600 512X8 1.35V & 1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

Rs.1,677

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MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
AQD-D3L8GN16-SG1
MEMORY MODULE, 8G DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

Rs.3,140

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MEMORY MODULE, 2G SO-DDR3-1600 256X8 1.35V&1.5V SAM
AQD-SD3L2GN16-SQ1
MEMORY MODULE, 2G SO-DDR3-1600 256X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip
Compare More
MEMORY MODULE, 4G SO-DDR3-1600 512X8 1.35V&1.5V SAM
AQD-SD3L4GN16-SG1
MEMORY MODULE, 4G SO-DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

Rs.1,677

Compare More
MEMORY MODULE, 8G SO-DDR3-1600 512X8 1.35V&1.5V SAM
AQD-SD3L8GN16-SG1
MEMORY MODULE, 8G SO-DDR3-1600 512X8 1.35V&1.5V SAM
  1. DDR3 1600Mhz Unbuffered SO-DIMM
  2. 30μ" gold plating thickness
  3. 1.35V power consumption
  4. Samsung original chip

Rs.3,140

Compare More
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